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Transistor BD139

Transistor BD139 NPN 100V 1'5A 12'5W >50MHZ. TO-126

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RBD139

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TRANSISTOR, NPN, TO-126
Polaridad del transistor: NPN
Collector Emitter Voltage V(br)ceo: 80V
Power Dissipation Pd: 1,25W
DC Collector Current: 1,5A
DC Current Gain hFE: 250
Transistor Case Style: TO-126
Collector Emitter Voltage Vces: 500mV
Continuous Collector Current Ic Max: 1,5A
Current Ic Continuous a Max: 1A
Tensión IC hFE: 150mA
Marcador: BD139
Full Power Rating Temperature: 25°C
Hfe Min: 40
N.º of Transistors: 1
Package / Case: TO-126
Power Dissipation Pd: 1,25W
Power Dissipation Ptot Max: 12.5W
Tensión Vcbo: 80V